The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
May. 27, 1998
Applicant:
Inventor:
Hermen Liu, Taoyuan Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A trench style bump and the application of the same. A trench style bump is formed on a silicon chip. The silicon chip is laminated on a substrate which has a circuit built inside and an anisotropic conductive film/anisotropic conductive paste formed thereon. During lamination, an ultra sonic wave is used to vibrate the substrate laterally, so that the conductive particles contained within the anisotropic conductive film/anisotropic conductive past are effectively trapped by the trench on the trench style bump.