The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Dec. 17, 1999
Aseem K. Srivastava, Gaithersburg, MD (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
A dual plasma source (,) is provided for a plasma processing system (,), comprising a first plasma source (,) and a second plasma source (,). The first plasma source (,) has a first plasma passageway (,) for transporting a first plasma therethrough toward a processing chamber (,), the first plasma passageway providing a first inlet (,) for accepting a first gas mixture to be energized by the first plasma source. The second plasma source (,) is connected to the first plasma source (,) and has a second plasma passageway (,) for transporting a second plasma therethrough toward the processing chamber (,), the second plasma passageway providing a second inlet (,) for accepting a second gas mixture to be energized by the second plasma source. The first plasma passageway (,) is constructed from a material that resists atomic oxygen recombination with the first plasma, and the second plasma passageway (,) is constructed from a material that resists etching by the second plasma. In a more limited embodiment, the first plasma passageway (,) is constructed from quartz (SiO,) and the second plasma passageway is (,) constructed from alumina (Al,O,) or single crystal alumina (sapphire).