The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
May. 03, 1999
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming a PE-CVD silicon nitride spacer having a good profile in the fabrication of a self-aligned contact wherein a two-step etching process forms the spacer is described. Semiconductor device structures are formed on a semiconductor substrate. A layer of silicon nitride is deposited by plasma-enhanced chemical vapor deposition over the surface of the substrate and overlying the semiconductor device structures. The silicon nitride layer is etched away using a two-step etching process to leave silicon nitride spacers on the side surfaces of the semiconductor device structures. The two-step process comprises a first etching away of 70% of the silicon nitride layer using Cl,/He chemistry and a second etching away of the remaining silicon nitride on top surface of the semiconductor device strucutures using SF,/CHF,/He chemistry.