The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Dec. 30, 1998
Michael WC Huang, Hsin-Chu, TW;
Tri-Rung Yew, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for forming a poly gate structure is disclosed. The method comprises forming a dielectric layer on a substrate and then forming a polysilicon layer on the dielectric layer. A metal silicide layer is then formed on the polysilicon layer and, just after formation of metal silicide is accomplished completely, an annealing process is practiced to induce phase transformation of metal silicide layer. Afterwards, a passivation layer is formed over the metal silicide layer, and then a standard photolithography method is applied to form primary structure of poly gate. Finally, both gate etch anneal and sidewall rapid thermal oxidation are used to form the poly gate structure completely. The essential point of the method is that the metal silicide is annealed just when it is formed, such that there is no phase transition of metal silicide will occur while any further treatment of the poly gate. By the way, surface extrusion of poly gate is fundamental prevented.