The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Dec. 30, 1998
Tsung-Lin Lu, Tainan Hsien, TW;
Ping-Chung Chung, Hsinchu Hsien, TW;
Yun-Sueng Liou, Miao-Li, TW;
Yung-Chun Wen, Hsinchu, TW;
Tsang-Jung Lin, Chungli, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for improving the uniformity of wafer-to-wafer film thicknesses. Before depositing films, shower heads in a PECVD system is heated to production temperature to make the entire system (including the shower heads) reach a stable temperature in coordination with heating of a heater block. Subsequently, a gas source, output via the shower heads, is provided, and then a plasma of the gas source is generated to form a film on the wafer due to the temperatures of the shower heads remain constant during wafers deposition. Therefore, the problem of the uneven thicknesses of films among wafers is resolved. Moreover, if the heating of the shower heads by use of a plasma (which can also be used to heat the heater block) and the heater block is concurrently performed after the preventive maintenance (PM) or open chamber cleaning of the PECVD system, the heating time of the heater block can be further shortened.