The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
May. 12, 1998
Applicant:
Inventors:
Lewis Shen, Cupertino, CA (US);
Wenge Yang, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A hard resist layer is formed on and/or within a deep-UV configured resist mask prior to patterning a semiconductor device feature. The hard resist layer reduces the amount of polymer residue generated during the patterning process, which can affect the resulting profile of the device feature. The hard resist mask is formed by subjecting the resist mask to a rapid thermal anneal (RTA) type of process. Because of the hard resist layer, the thickness of the resist mask can also be reduced, thereby increasing the resolution capabilities of the resist mask.