The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Apr. 16, 1999
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of manufacturing an interconnect. A first conductive layer is formed on the wafer. Portions of the first conductive layer are removed to form a wire in the interior region and to expose the surface of the wafer in the edge region, simultaneously. An insulating layer is formed on the wire and the wafer. An opening is formed to penetrate through the insulating layer and exposes the wire. A second conductive layer is formed on the insulating layer and fills the opening.