The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Dec. 31, 1998
Applicant:
Inventors:
Graham Hills, Los Gatos, CA (US);
Thomas D. Nguyen, Campbell, CA (US);
Douglas Keil, Fremont, CA (US);
Keyvan Khajehnouri, San Jose, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
B44C 1/22 ; H01L 2/1302 ;
Abstract
A method of etching an oxide layer in a plasma etching reactor is disclosed. The method includes the steps of providing a semiconductor substrate including the oxide layer into the plasma etching reactor and flowing an etching gas that includes a fluorocarbon gas, a nitrogen reactant gas, an oxygen reactant gas, an inert carrier gas, and a hydrogen-containing additive gas into the plasma etching reactor. The method further includes etching an opening at least partially through the oxide layer using a plasma that is formed from the etching gas.