The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Dec. 09, 1996
Chung-Kuang Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A polysilicon resistor structure for use within integrated circuits and a method by which the polysilicon resistor structure may be formed. A first insulating layer which is formed from a glasseous material is formed directly upon the surface of a semiconductor substrate. A polysilicon resistor is formed in contact with the first insulating layer. A second insulating layer is formed directly upon the first insulating layer and over the polysilicon resistor. The second insulating layer is formed from a silicon oxide material deposited through a Plasma Enhanced Chemical Vapor Deposition process employing silane as the silicon source material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile