The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Aug. 04, 1998
Chih-Rong Chen, Chupei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating salicide. A metal layer is formed on a substrate with a polysilicon gate and a source/drain region. A material layer is then formed on the metal layer, wherein the material is selected to produce compressive stress as compressive stress is produced on the substrate and to produce tensile stress as tensile stress is produced in the substrate. The material layer needs to be chosen with the same stress produced by the metal layer. A thermal process is then performed on the substrate to form a silicide on the polysilicon gate and the source/drain region. The material layer and the unreacted metal layer are removed and therefore the salicide process is accomplished.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile