The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2001

Filed:

Sep. 23, 1999
Applicant:
Inventor:

Yun-Biao Xin, St. Peters, MO (US);

Assignee:

MEMC Electronic Materials, Inc., St. Peters, MO (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1326 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1326 ; H01L 2/1302 ;
Abstract

A method of processing a semiconductor wafer sliced from a single-crystal ingot includes lapping front and back surfaces of the wafer to reduce the thickness of the wafer and to improve the flatness of the wafer. The front surface is subjected to fine grinding to reduce the damage on the front surface while leaving damage on the back surface intact. The front and back surfaces are simultaneously polished to improve the flatness of the wafer and to reduce wafer damage on the front and back surfaces. The wafer damage remaining on the back surface is greater than the wafer damage on the front surface. The wafer damage remaining on the back surface facilitates gettering.


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