The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Apr. 15, 1999
Applicant:
Inventors:
Horng-Wen Chen, Taichung, TW;
Chen-Yu Chang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/146 ; H01L 2/178 ; H01L 2/1301 ;
U.S. Cl.
CPC ...
H01L 2/146 ; H01L 2/178 ; H01L 2/1301 ;
Abstract
A method that teaches the formation of deep trenches within the surface of a semiconductor wafer, these deep trenches are used to separate the wafer into individual chips by applying stress to the wafer. The formation of the deep trenches uses exposing a thick layer of photoresist followed by etching. The etching is a two step etch, a stabilization etch and a main etch. The stress used to separate the wafer into individual chips can be invoked by applying physical force to the wafer.