The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Apr. 27, 2000
John T. Moore, Boise, ID (US);
David L. Chapek, Merrimack, NH (US);
Micron Technology, INC, Boise, ID (US);
Abstract
In etching trench isolation structures, a pad oxide or sacrificial oxide may be formed with substantially the same (or higher) etch rate as the trench filler. Because the etch rate in the trench area is substantially similar to (or less than) the etch rate in the non-trench area, similar amounts of material are removed in both the trench area and non-trench area in a subsequent etching process. Consequently, formation of notches and grooves in the semiconductor structure is minimized. A sacrificial oxide layer may be made depositing a layer of a suitable material on the surface of a semiconductor structure. By depositing sacrificial oxide layer instead of thermally growing a sacrificial oxide layer, grooves and the notches in the trench areas are filled by the deposited material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile