The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
May. 27, 1999
Jyh-Haur Wang, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
The invention provides a method for fabricating ultra-shallow lightly doped source and drain regions. A screen oxide layer is formed on a substrate having a gate thereon. Impurity ions are implanted into-the substrate through the screen oxide layer to form lightly doped source and drain regions adjacent to the gate. A post-implant anneal is performed on the lightly doped source and drain regions using a rapid thermal anneal in a nitrogen containing atmosphere. The nitrogen anneal injects vacancies into the lightly doped source and drain regions reducing diffusion which is dependent on intersticial ions and increasing the activation ratio by dissolving impurity ion complexes.