The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Dec. 30, 1998
Shuenn-Jeng Chen, Chia-Li, TW;
Ching-Hsing Hsieh, Pingtung Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
This invention provides a planarization method that solves the microscratch problem caused by chemical-mechanical polishing. This method comprises the following steps: providing a substrate with semiconductor devices, forming a SRO oxide on the substrate, forming a SOG layer on the SRO layer, performing a curing process, performing an implantation process during the curing process, forming an oxide layer on the SRO oxide, and planarizing the oxide layer by CMP. Another SOG layer is formed on the planarized oxide layer, a curing process is performed on the second SOG layer, and a cap oxide layer is formed on the second SOG layer to adjust the thickness of the dielectric layer. This invention can solve conventional problems such as microscratching and metal bridges.