The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Feb. 01, 1999
Applicant:
Inventors:
Tsing-Fong Hwang, Tainan, TW;
Tsung-Yuan Hung, Tainan, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract
A method for reducing salicide lateral growth. A substrate having a gate structure and an anti-reflection layer on the gate structure is provided. A spacer is formed on the side wall of the gate structure and the anti-reflection layer. Then, the anti-reflection layer is removed to expose the gate structure; wherein the gate structure and the spacers together form a recess structure. A salicide layer is formed on the gate structure in the recess structure and on the substrate.