The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Oct. 01, 1998
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method of forming polysilicon resistors having differing resistances using a dual polysilicon process is described. A first polysilicon layer is deposited over a dielectric layer on a semiconductor substrate. The first polysilicon layer is etched away where it is not covered by a mask. Thereafter, a second polysilicon layer is deposited overlying the first polysilicon layer and the dielectric layer. The first and second polysilicon layers are patterned to form a first polysilicon structure comprising the first and second polysilicon layers over the dielectric layer and a second polysilicon structure comprising the second polysilicon layer overlying the dielectric layer. The first and second polysilicon structures are doped to form the first polysilicon structure having a first resistance and the second polysilicon structure having a second resistance wherein the first resistance is lower than the second resistance.