The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Nov. 19, 1999
Applicant:
Inventors:
Tony Lin, Kaohsiung Hsien, TW;
C. C. Hsue, Hsinchu, TW;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for manufacturing a PMOS transistor. A gate terminal is formed over a substrate. Spacers are formed on the sidewalls of the gate terminal. A source/drain terminal is formed in the substrate on each side of the gate terminal, and then a metal silicide layer is formed over the top surface of the gate terminal and the substrate. The spacers are next removed. Using the metal silicide layer as a mask, a source/drain extension region is formed in the substrate between the gate terminal and the source/drain terminal. Similarly, using the metal silicide layer as a mask, an anti-punchthrough region is form in the substrate interior under the source/drain extension region.