The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Aug. 19, 1998
James A. Cunningham, Saratoga, CA (US);
Philips Semiconductor, Inc., Tarrytown, NY (US);
Abstract
An improved gate electrode provides greater tolerances to higher temperature annealing treatments, and is useful in connection with the formation of self-aligned contacts as are needed for high density embedded DRAM applications. Consistent with one embodiment, a process for manufacturing a polycide transistor gate electrode involves forming a cap dielectric and dielectric spacer, with the electrode exhibiting a reduced diffusion transport of dopants between an underlying doped polysilicon layer and an overlying silicide layer. The reduced transport results from the presence of a thin barrier layer between the doped polysilicon layer and silicide layer, and the gate electrode process forms a thermally-oxidized thin polysilicon side-wall film against the polysilicon layer, the barrier layer, the silicide layer, and the cap dielectric layer. The polysilicon side-wall film is used for blocking substantial oxidation of the barrier film.