The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Apr. 12, 1999
Applicant:
Inventors:
Chein-Cheng Wang, Taichung Hsien, TW;
Shih-Chanh Chang, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of fabricating a glue layer and a barrier layer. A Ti layer is formed with a collimator sputtering in the via opening or the contact opening of the substrate. Through the control of flow of N,and Ar, a nitride mode TiN,layer is formed on the Ti layer by sputtering. The nitride mode TiN,layer and the Ti layer uncovered by the nitride mode TiN,layer are treated with N,RF plasma. This strengthens the structure of the nitride mode TiN,layer and allows the reaction with the exposed Ti layer so that it is transformed into a TiN,layer.