The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Nov. 09, 1998
Hiroshi Takeno, Gunma-ken, JP;
Ken Aihara, Gunma-ken, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method of determining oxygen precipitation behavior in a silicon monocrystal through use of a programmed computer. According to this method, an initial oxygen concentration of a silicon monocrystal, an impurity concentration or resistivity of the silicon monocrystal, and conditions of heat treatment performed on the silicon monocrystal are input, and an amount of precipitated oxygen and bulk defect density of the silicon monocrystal after the heat treatment are calculated based on the input data. The method enables quick, simple, and accurate determination of an amount of precipitated oxygen and bulk defect density in silicon during or after heat treatment.