The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Dec. 08, 1998
Kuo-Chi Lin, Lur-Chou, TW;
Kuen-Yow Lin, Chia-Yi, TW;
Chien-Hua Tsai, Taichung, TW;
Kun-Chi Lin, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for forming a multi-layered liner on the sidewalls of a node contact opening includes the steps of providing a substrate having a dielectric layer thereon. The dielectric layer further includes a node contact opening that exposes a portion of the substrate. A first liner layer is then formed on the sidewalls of the node contact opening. Next, a second liner layer is formed over the first liner layer such that the first liner layer and the second liner layer together form a dual-layered liner. The first liner layer in contact with the dielectric layer has good insulation capacity while the second liner layer has good etch-resisting property.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile