The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Feb. 02, 2000
Applicant:
Inventor:
Zoilo Cheng Ho Tan, Cupertino, CA (US);
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 ;
U.S. Cl.
CPC ...
G03F 7/26 ;
Abstract
An interrupted development, multi-cycle development process, in combination with an aqueous photoresist developer composition enables development of electron-beam exposed novolak-resin based photoresists with resolution of less than 0.20 &mgr;m, contrast >5, and dark loss less than 10%. The developer composition of this invention includes a metal alkali, a dialkylalkanolamine adjuvant, a surfactant and a buffer.
Quick Actions:
Tan, Zoilo Cheng Ho. (2001). Photoresist developer and method (U.S. Patent No. 6200736). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6200736
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile