The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Feb. 18, 1999
Yang-Tung Fan, Hsin-Chu, TW;
Chih-Hsiung Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for forming an optoelectronic microelectronic fabrication and an optoelectronic microelectronic fabrication fabricated in accord with the method. There is first provided a substrate having at minimum a first photoactive region and a second photoactive region formed therein. There is then formed over the substrate a patterned first color filter layer registered with the first photoactive region. There is then formed upon the patterned first color filter layer a first optically transparent planarizing encapsulant layer. There is then formed upon the first optically transparent planarizing encapsulant layer a patterned second color filter layer registered with the second photoactive region. Finally, there is then formed upon the patterned second color filter layer a second optically transparent planarizing encapsulant layer. The method contemplates an optoelectronic microelectronic fabrication fabricated in accord with the method.