The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Sep. 07, 1999
Hisao Asakura, Ome, JP;
Yoshitaka Tadaki, Hannou, JP;
Toshihiro Sekiguchi, Hidaka, JP;
Ryo Nagai, Mizuho-machi, JP;
Masafumi Miyamoto, Tachikawa, JP;
Masayuki Nakamura, Ome, JP;
Shinichi Miyatake, Ome, JP;
Tsuyuki Suzuki, Akishima, JP;
Masahiro Hyoma, Kodaira, JP;
Other;
Abstract
In a case where an impurity for suppressing the short channel effect of MISFETs is introduced into a semiconductor substrate obliquely to the principal surface thereof, gate electrodes adjacent to each other are arranged so that the impurity to be introduced in directions crossing the gate electrodes may not be introduced into the part of the semiconductor substrate lying between the gate electrodes, and the source region of the MISFETs is arranged in the part between the gate electrodes.