The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Dec. 15, 1997
Applicant:
Inventors:
Shigenobu Maeda, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Yasuo Yamaguchi, Tokyo, JP;
Yuichi Hirano, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
An FS upper nitride film (,) is formed on the upper surface of an FS electrode (,). Therefore, the upper surface of the FS electrode (,) is not exposed even when an FS upper oxide film (,) is partially almost removed in the manufacturing process. Thus, a semiconductor device which prevents degradation in operation characteristics and reliability due to existence of an FS insulating layer can be provided.