The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jan. 25, 1999
Jyh-Haur Wang, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
The invention provides a method for fabricating ultra-shallow, low resistance junctions. In the preferred embodiment, a nitrogen containing screen oxide layer is formed on an undoped area of a substrate by poly re-oxidation using rapid thermal processing in a nitrogen containing atmosphere. Impurity ions are implanted into the substrate, in the undoped area, through the nitrogen containing screen oxide layer to form lightly doped source and drain regions. A post-implant anneal is performed on the lightly doped source and drain regions using a rapid thermal anneal in a nitrogen containing atmosphere. The nitrogen containing screen oxide layer: prevents surface dopant loss during post implant anneal; prevents gate oxide degradation during ion implantation and screen oxide stripping; and acts as a diffusion barrier, reducing oxygen enhanced diffusion. Alternatively, the poly re-oxidation can be performed in an O,atmosphere followed by a rapid thermal anneal in a nitrogen containing atmosphere.