The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jan. 09, 1996
Applicant:
Inventors:
Virendra V. S. Rana, Los Gatos, CA (US);
Andrew Conners, Los Gatos, CA (US);
Anand Gupta, San Jose, CA (US);
Xin Guo, Mountain View, CA (US);
Soonil Hong, Los Altos, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1311 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1311 ; H01L 2/1469 ;
Abstract
A semiconductor manufacturing process with improved gap fill capabilities is provided by a three step process of FSG deposition/etchback/FSG deposition. A first layer of FSG is partially deposited over a metal layer. An argon sputter etchback step is then carried out to etch out excess deposition material. Finally, a second layer of FSG is deposited to complete the gap fill process.