The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Apr. 28, 1998
Masaki Matsui, Nagoya, JP;
Shoichi Yamauchi, Obu, JP;
Hisayoshi Ohshima, Obu, JP;
Kunihiro Onoda, Nagoya, JP;
Akiyoshi Asai, Aichi-gun, JP;
Takanari Sasaya, Kariya, JP;
Takeshi Enya, Nagoya, JP;
Jun Sakakibara, Anjo, JP;
Denso Corporation, Kariya, JP;
Abstract
Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.