The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Dec. 08, 1998
Applicant:
Inventors:
Kun-Lin Wu, Taichung, TW;
Cheng-Jung Hsu, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method of fabricating shallow trench isolation. A silicon oxide layer is formed on a substrate. The silicon oxide layer is patterned and a portion of the substrate is removed to form a trench within the substrate. A liner oxide layer is formed on the sidewall of the trench. An insulating layer is formed on the substrate and filled in the trench. A portion of the insulating layer is removed by CMP to expose the silicon oxide layer. The silicon oxide layer is removed and the STI structure is completed.