The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Dec. 18, 1998
Applicant:
Inventors:
John E. Berg, Sunnyvale, CA (US);
Bernice L. Kickel, Boise, ID (US);
John A. Smythe, III, Boise, ID (US);
Assignee:
Zilog Inc., Campbell, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/18234 ;
Abstract
The present invention provides a method of forming a high quality thin oxide on a semiconductor body. A sacrificial oxide is formed on the semiconductor and then etched to eliminate the surface contamination of the semiconductor body. Then, an EEPROM oxide is formed following by an arsenic implant. Next the EEPROM oxide on the semiconductor body is then prepared by thin oxide growth. The thin oxide is preferably formed in a steam ambient. Subsequently, the oxide is annealed under nitrous oxide ambient using a combination of in-situ and RTP annealing process.