The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jan. 31, 2000
Jhy-Jyi Sze, Tainan, TW;
Jung-Chao Chiou, Hsin-chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for forming a capacitor structure of semiconductor is disclosed. The method includes the following steps. First of all, a first oxide layer is deposited. A first nitride layer is formed. Consequentially, a portion of the first nitride layer and a portion of the first oxide layer are all etched. Then, the first polysilicon layer is formed. The portion of the first polysilicon layer is reduced to a specified thickness. Next, boron phosphorus silicon glass layer blankly and conformably is formed. Then, a portion of said boron phosphorus silicon glass layer is etched. A second polysilicon layer is deposited. Next, a portion of the second polysilicon layer is etched back. Next, the boron phosphorus silicon glass layer is etched. Then, the first polysilicon layer is etched back. A second nitride layer is formed. Next, a second oxide layer is deposited. Finally, a conductive layer is formed as a top plate of capacitor, whereby a capacitor structure is completed and there are a top plate and a bottom plate.