The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Aug. 16, 1999
Jiann-Jong Wang, Tao-Yuan, TW;
Ding-Dar Hu, Taichung, TW;
Horng-Jer Hsiue, Chiao-Yi, TW;
Ching-Kunn Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
The present invention provides a method for performing a pre-amorphization implant which reduces damage to the resist protect oxide layer and reduces leakage current between the gate and substrate. Two novel approaches are provided, both of which use a photoresist mask to protect the RPO from implant damage during PAI. In the first approach, the PAI is performed immediately after RPO etching to form contact openings. Thus the original photoresist mask is still on the RPO. In the second approach, the photoresist mask is re-formed prior to PAI to protect the RPO from implant damage.