The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Dec. 23, 1996
Applicant:
Inventors:
Paul Kevin Shufflebotham, San Jose, CA (US);
Brian McMillin, Fremont, CA (US);
Alex Demos, San Francisco, CA (US);
Huong Nguyen, Danville, CA (US);
Butch Berney, Pleasanton, CA (US);
Monique Ben-Dor, Palo Alto, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 3/732 ;
U.S. Cl.
CPC ...
H01J 3/732 ;
Abstract
A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.