The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Aug. 10, 1999
Kung Linliu, Hsinchu, TW;
Worldwide Semiconductor Manufacturing Corp., Hsinchu, TW;
Abstract
A multiple crown capacitor and a method of fabricating such a capacitor is described. The method is applicable to a substrate in which an isolation layer is formed on the substrate, with a node contact plug formed in the isolation layer. A sacrificial layer is then formed on the substrate followed by a patterning of the sacrificial layer to form a succession of openings above the node contact plug and its surroundings, exposing the isolation layer and a portion of the node contact plug upper surface. Thereafter, a conformal conductive layer is formed on the sacrificial layer and in the openings. A portion of the conductive layer, which is higher than the sacrificial layer, is removed, followed by removing the sacrificial layer to form a bottom electrode. A conformal dielectric layer and an upper electrode are sequentially formed on the bottom electrode to complete the formation of the capacitor. The structure of the capacitor includes a bottom electrode, which comprises a succession of openings on the upper surface of the bottom electrode. The bottom electrode is located on the node contact plug and is electrically connected to the node plug. A conformal dielectric layer and an upper electrode are sequentially formed on the bottom electrode.