The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Nov. 17, 1998
Tomohiro Okumura, Kadoma, JP;
Ichiro Nakayama, Kadoma, JP;
Shozo Watanabe, Moriguchi, JP;
Hideo Haraguchi, Toyonaka, JP;
Matsushita Electric Industrial Co, Ltd., Osaka, JP;
Abstract
Plasma is generated in a vacuum chamber (,) by supplying high frequency power to a spiral antenna (,) from an antenna-use high frequency power source (,) and by supplying high frequency power to an electrode (,) by an electrode-use high frequency power source (,) in a state where evacuating a vacuum chamber (,) while introducing a specified gas into the vacuum chamber, thereby controlling the vacuum chamber at a predetermined pressure. Plasma processing such as etching is performed on a substrate (,) located on the electrode (,), the interior of the vacuum chamber is heated to 80° C. or higher, wherein a resistance-heating heater (,) constituted of a heating element shielded from electromagnetic waves by a conductive sheath and a pressure-weld type thermocouple (,) provided on a dielectric body (,) are connected to a temperature adjuster (,). A insulating material (,) is arranged between the heater (,) and the antenna (,), and an inner chamber (,) including a belt heater (,) is also arranged.