The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Jul. 21, 1998
Jeffrey Allan Shields, Sunnyvale, CA (US);
Lewis Shen, Cupertino, CA (US);
Anne E. Sanderfer, Campbell, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A defective photoresist mask is removed from a metal layer prior to etching by low-temperature processing to minimize or substantially eliminate any resulting residue on the metal layer, thereby enabling the formation of an interconnection pattern with minimal defects. Embodiments include removing the defective mask by applying a solvent at a temperature of about 80° C. or less, forming a new photoresist mask, and etching the underlying metal layer. The substantial elimination of residue on the metal layer prior to etching avoids bridging between resulting interconnection lines and, hence, short circuiting and device failure.