The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Dec. 15, 1998
Sang-bom Kang, Seoul, KR;
Yun-sook Chae, Seoul, KR;
Chang-soo Park, Kyungki-do, KR;
Sang-in Lee, Kyungki-do, KR;
Samsung Electronics, Co., Ltd., Suwon, KR;
Abstract
A method for forming a metal layer using an atomic layer deposition process. A sacrificial metal atomic layer is formed on a semiconductor substrate by reacting a precursor containing a metal with a reducing gas, and a metal atomic layer is formed of metal atoms separated from a metal halide gas on a semiconductor substrate by reacting the sacrificial metal atomic layer with a metal halide gas. Also, a silicon atomic layer may be additionally formed on the metal atomic layer using a silicon source gas, to thereby alternately stack metal atomic layers and silicon layers. Thus, a metal layer or a metal silicide layer having excellent step coverage can be formed on the semiconductor substrate.