The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Sep. 28, 1999
Tong-Hsin Lee, Taipei Hsien, TW;
Abstract
The invention provides a method for fabricating a lower electrode of the capacitor, which method provides a substrate formed with source/drain (S/D) regions. Landing pads are formed on the substrate for connecting to source/drain regions. A dielectric layer is formed on the substrate to cover the landing pads. A stop layer, an insulating layer, and a mask layer are formed in sequence on the dielectric layer. The insulating layer and the mask layer are patterned to form a capacitor opening that exposes the stop layer, followed by forming a spacer on a sidewall of the capacitor opening. With the patterned mask layer and the spacer serving as an etching mask, the stop layer and the dielectric layer are etched in sequence to form a node contact opening which exposes the landing pad, wherein the capacitor opening and the node contact opening form a damascene contact opening. A conformal conducting layer is formed for filling the damascene contact opening, and planarized by CMP. Consequently, the insulating layer is removed by etching to complete the manufacture of lower electrodes of the capacitor.