The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Apr. 09, 1998
Applicant:
Inventor:
Ellis Lee, Taipei, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of fabricating copper interconnection is provided comprising forming a dielectric layer with a trench or a via on a semiconductor substrate. A titanium layer is formed on the dielectric layer. A copper layer doped with light silicon is formed in the trench or the via. The copper layer is encapsulated by annealing to make silicon doped in the copper layer diffuse toward the surface of the copper to react with the titanium layer and the gas. It prevents the copper layer from oxidation and diffusion to increase the yield.