The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Sep. 08, 1998
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process is described for forming a buried, or pocket, ion implant in a semiconductor device. In particular, said pocket is limited to only the drain side of a field effect transistor. To achieve this the photoresist that is used to protect the source and drain regions during ion implantation is located at different distances from the gate pedestal. The photoresist on the source side is placed closer to the gate pedestal than it is on the drain side. As a result, when ions arrive at the surface at a sufficiently shallow angle to be able to penetrate the semiconductor regions immediately beneath the gate oxide, photoresist at the source side blocks the beam while the photoresist on the drain side is far enough away from the gate not to intercept the beam. Thus, a single asymmetrically located pocket is formed in a single step.