The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Dec. 11, 1998
Abstract
A structure of a photo diode and a method of manufacturing a photo diode comprise the steps of providing a substrate having an isolation region and a device region. A doped region is formed adjacent to the isolation region in the substrate by performing an ion implantation step and an annealing step. Next, a protective layer utilized to prevent the plasma damage is formed on the substrate and the isolation region, and an inter-layer dielectric layer is formed on the protective layer. Thereafter, a contact hole is formed to expose a portion of the doped region by patterning the inter-layer dielectric layer and the protective layer, and a contact plug is formed by filling the contact hole with a conductive material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile