The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Oct. 28, 1998
Applicant:
Inventors:
Ting-Chang Chang, Hsinchu, TW;
Jung-Chih Hu, Kaohsiung Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 1/800 ;
U.S. Cl.
CPC ...
B32B 1/800 ;
Abstract
A structure of a stacked barrier layer is provided. A first titanium layer is formed on a semiconductor substrate using plasma enhanced chemical vapor deposition (PECVD). At least a stacked barrier layer is formed on the first titanium layer. The stacked barrier layer includes a first titanium nitride layer and a plasma treated titanium nitride layer. The plasma treated titanium nitride layer is treated using a plasma gas including ammonia gas and nitrogen gas.