The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2001

Filed:

Sep. 24, 1998
Applicant:
Inventors:

Jamie Joseph LeVasseur, Vancouver, WA (US);

Joseph E. Herbst, Milpitas, CA (US);

Assignee:

Integrated Silicon Soulution, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/200 ; G06F 1/300 ;
U.S. Cl.
CPC ...
G06F 1/200 ; G06F 1/300 ;
Abstract

A two port high speed integrated circuit memory device that includes a bus transceiver, a memory array and a decoder. The present invention provides a processor high speed access to the internal memory array via very low capacitive load address and data buses. The present invention also buffers a secondary bus to provide access to slower-speed local devices. The bus transceiver transfers address, data and control signals between the primary and secondary port and also couples signals to the internal memory array. The bus transceiver includes an input data bus, an output data bus, and an address and control bus. Each of these separate buses include a buffer at the primary and secondary port to minimize capacitive loading. The decoder in the two port memory device decodes memory chip select signals and control signals that define the operational mode of the device. To save power the present invention provides an operational mode in which primary bus signals are not reflected to the secondary bus unless the internal memory array is not selected by the chip selects. In an enhanced mode the two port memory device includes a ready signal generator feature, and chip select lines are converted into additional address input lines.


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