The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
May. 06, 1999
Applicant:
Inventor:
Kung Linliu, Hsinchu, TW;
Assignee:
Worldwide Semiconductor Manufacturing Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438720 ; 438733 ; 438742 ;
Abstract
A method for fabricating a capacitor is described. A dielectric layer and a polysilicon layer thereon are provided. A patterned oxide layer and spacers on the sidewalls of the patterned oxide layer are formed. The polysilicon layer is etched using the oxide layer and spacer as an etching mask. The oxide layer and spacer are then removed. A dielectric layer and a conductive layer are sequentially formed on the polysilicon layer.