The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Sep. 23, 1997
Applicant:
Inventors:
Chan-lon Yang, Los Gatos, CA (US);
Usha Raghuram, San Jose, CA (US);
Kimberley A Kaufman, Eden Prairie, MN (US);
Daniel Arnzen, Eden Prairie, MN (US);
James Nulty, San Jose, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
216 67 ; 216 74 ; 438710 ; 438720 ;
Abstract
The present invention relates to a method of plasma etching and a method of operating a plasma etching apparatus.
Yang, Chan-lon. (2000). Plasma etching method (U.S. Patent No. 6165375). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6165375
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile