The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2000

Filed:

Nov. 09, 1998
Applicant:
Inventors:

Kevin Lin, Taipei Hsien, TW;

Ching-Chiao Hao, Hsinchu, TW;

Kun-Chi Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ; 438396 ; 438652 ; 438657 ;
Abstract

A method for fabricating a type of bit line is able to form a small-sized bit line. In this method a first dielectric layer, a first conductive layer, and a second conductive layer are formed on a substrate in sequence. The first dielectric layer is exposed, then a second conducting wire and a first conducting wire are formed, respectively. A portion of the second conducting wire is removed by a cleaning liquid, so that the feature size of the second conducting wire is less than the feature size of the first conducting wire. An oxide layer is formed on the second conducting wire and the first conducting wire by performing a thermal treatment. The feature size of the second conducting wire is approximately equal to the feature size of the first conducting wire.


Find Patent Forward Citations

Loading…