The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Sep. 27, 1996
Katsuya Watanabe, Kudamatsu, JP;
Saburo Kanai, Hikari, JP;
Ryoji Hamasaki, Hikari, JP;
Tsuyoshi Yoshida, Hikari, JP;
Yutaka Omoto, Hikari, JP;
Masayuki Kojima, Kokubunji, JP;
Syunji Sasabe, Irima, JP;
Tadamitsu Kanekiyo, Kudamatsu, JP;
Takazumi Ishizu, Hikari, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.