The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2000

Filed:

Jul. 01, 1998
Applicant:
Inventors:

Herbert Lei Ho, New Windsor, NY (US);

Radhika Srinivasan, Mahwah, NJ (US);

Scott D Halle, Hopewell Junction, NY (US);

Erwin Hammerl, Zangberg, DE;

David M Dobuzinsky, Hopewell Junction, NY (US);

Jack Allan Mandelman, Stormville, NY (US);

Mark Anthony Jaso, Fairfax Station, VA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438270 ; 438242 ; 438243 ; 438244 ; 438245 ; 438268 ; 438259 ;
Abstract

The present invention includes a method and system to increase the deep trench sidewall surface area in a storage node on a DRAM chip. By tilting the trenches the capacitance is increased without taking up more space on the semiconductor chip.


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