The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Jan. 26, 2000
Chun-Lung Chen, Tainan Hsien, TW;
Hsi-Mao Hsiao, Hsinchu, TW;
Hung-Chen Yu, Yi-Lan Hsien, TW;
Tzung-Han Lee, Taipei, TW;
United Microelectronics Corp, Hsinchu, TW;
Abstract
A method is used to form a shallow trench isolation structure. According to the invention, prior to performing CMP on a HDPCVD oxide layer, a smoothing step is performed on the HDPCVD oxide layer to smooth the peak profile of the oxide layer to reduce the moment resulting from the CMP on the peak, and to prevent the later-formed shallow trench isolation structure from being pulled out. In addition, since the invention prevents the later-formed shallow trench isolation structure from being pulled out, the particles resulting from the oxide pulled out from the shallow trench are reduced. Thus, particle damage to the surface of the wafer is reduced.